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2SK3793

Features: • Super low on-state resistanceRDS(on)1 = 125 m MAX. (VGS = 10 V, ID = 6 A)RDS(on)2 = 148 m MAX. (VGS = 4.5 V, ID = 6 A)• Low C iss: C iss = 900 pF TYP.• Built-in gate protection diodeSpecifications Drain to Source Voltage (VGS = 0 V)Gate to Source Voltage (VDS = 0 V)...

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SeekIC No. : 004226886 Detail

2SK3793: Features: • Super low on-state resistanceRDS(on)1 = 125 m MAX. (VGS = 10 V, ID = 6 A)RDS(on)2 = 148 m MAX. (VGS = 4.5 V, ID = 6 A)• Low C iss: C iss = 900 pF TYP.• Built-in gate pr...

2SK3793 Data Sheet

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Part Number:
2SK3793
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Super low on-state resistance
RDS(on)1 = 125 m MAX. (VGS = 10 V, ID = 6 A)
RDS(on)2 = 148 m MAX. (VGS = 4.5 V, ID = 6 A)
• Low C iss: C iss = 900 pF TYP.
• Built-in gate protection diode




Specifications

Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25)
Total Power Dissipation (TA = 25)
Channel Temperature
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2		 VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS		 100
±20
±12
±22
20
2.0
150
−55 to +150
10
10		 V
V
A
A
W
W


A
mJ
Notes 1. PW 10 s, Duty Cycle 1%
2. Starting Tch = 25, VDD = 50 V, RG = 25 , VGS = 20 0 V




Description

The 2SK3793 is N-channel MOS Field Effect Transistor designed for high current switching applications.




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