2SK3766

Features: Application• Low drain-source ON resistance: RDS (ON) = 1.9 (typ.)• High forward transfer admittance: |Yfs| = 0.65 S (typ.)• Low leakage current: IDSS = 100 A (max) (VDS = 450 V)• Enhancement model: Vth = 3.5~4.5 V (VDS = 10 V, ID = 1 mA)Specifications Characte...

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SeekIC No. : 004226876 Detail

2SK3766: Features: Application• Low drain-source ON resistance: RDS (ON) = 1.9 (typ.)• High forward transfer admittance: |Yfs| = 0.65 S (typ.)• Low leakage current: IDSS = 100 A (max) (VDS...

floor Price/Ceiling Price

Part Number:
2SK3766
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:






Application

• Low drain-source ON resistance: RDS (ON) = 1.9 (typ.)
• High forward transfer admittance: |Yfs| = 0.65 S (typ.)
• Low leakage current: IDSS = 100 A (max) (VDS = 450 V)
• Enhancement model: Vth = 3.5~4.5 V (VDS = 10 V, ID = 1 mA)



Specifications

Characteristics
Symbol
Ratings
Unit
Drain-source voltage
VDSS
450
V
Drain-gate voltage (RGS=20k)
VDGR
450
V
Gate?source voltage
VGSS
±30
V
Drain current DC (Note1)
ID
2
A
Pulse (t=1ms)
(Note1)
IDP
5
Drain power dissipation (Tc=25)
PD
30
W
Single pulse avalanche energy
(Note 2)
EAS
103
mJ
Avalanche current
IAR
2
A
Repetitive avalanche energy (Note 3)
EAR
3
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
-55 ~ +150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).






Description






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