Features: Application• Low drain-source ON resistance: RDS (ON) = 1.9 (typ.)• High forward transfer admittance: |Yfs| = 0.65 S (typ.)• Low leakage current: IDSS = 100 A (max) (VDS = 450 V)• Enhancement model: Vth = 3.5~4.5 V (VDS = 10 V, ID = 1 mA)Specifications Characte...
2SK3766: Features: Application• Low drain-source ON resistance: RDS (ON) = 1.9 (typ.)• High forward transfer admittance: |Yfs| = 0.65 S (typ.)• Low leakage current: IDSS = 100 A (max) (VDS...
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Characteristics |
Symbol |
Ratings |
Unit | |
Drain-source voltage |
VDSS |
450 |
V | |
Drain-gate voltage (RGS=20k) |
VDGR |
450 |
V | |
Gate?source voltage |
VGSS |
±30 |
V | |
Drain current | DC (Note1) |
ID |
2 |
A |
Pulse (t=1ms) (Note1) |
IDP |
5 | ||
Drain power dissipation (Tc=25) |
PD |
30 |
W | |
Single pulse avalanche energy (Note 2) |
EAS |
103 |
mJ | |
Avalanche current |
IAR |
2 |
A | |
Repetitive avalanche energy (Note 3) |
EAR |
3 |
mJ | |
Channel temperature |
Tch |
150 |
||
Storage temperature range |
Tstg |
-55 ~ +150 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).