2SK3762

Features: Application` Low drain-source ON resistance: RDS (ON) = 5.6 (typ.)` High forward transfer admittance: |Yfs| = 2.0 S (typ.)` Low leakage current: IDSS = 100 A (VDS = 720 V)` Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristics Symbol Ratings Unit D...

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SeekIC No. : 004226874 Detail

2SK3762: Features: Application` Low drain-source ON resistance: RDS (ON) = 5.6 (typ.)` High forward transfer admittance: |Yfs| = 2.0 S (typ.)` Low leakage current: IDSS = 100 A (VDS = 720 V)` Enhancement-mod...

floor Price/Ceiling Price

Part Number:
2SK3762
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:






Application

`  Low drain-source ON resistance: RDS (ON) = 5.6 (typ.)
`  High forward transfer admittance: |Yfs| = 2.0 S (typ.)
`  Low leakage current: IDSS = 100 A (VDS = 720 V)
`  Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)



Specifications

Characteristics
Symbol
Ratings
Unit
Drain-source voltage
VDSS
900
V
Drain-gate voltage (RGS=20k)
VDGR
900
V
Gate?source voltage
VGSS
±30
V
Drain current DC                   (Note1)
ID
2.5
A
Pulse (t=1ms)
                      (Note1)
IDP
7.5
Drain power dissipation (Tc=25)
PD
62
W
Single pulse avalanche energy
                                              (Note 2)
EAS
21.6
mJ
Avalanche current
IAR
2.5
A
Repetitive avalanche energy  (Note 3)
EAR
6.2
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
-55 ~ +150





Description






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