2SK3760

Features: Application` Low drain-source ON resistance: RDS (ON) = 1.7 (typ.)` High forward transfer admittance: |Yfs| = 2.5S (typ.)` Low leakage current: IDSS = 100 A (VDS = 600 V)` Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristics Symbol Ratings Unit Dr...

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SeekIC No. : 004226872 Detail

2SK3760: Features: Application` Low drain-source ON resistance: RDS (ON) = 1.7 (typ.)` High forward transfer admittance: |Yfs| = 2.5S (typ.)` Low leakage current: IDSS = 100 A (VDS = 600 V)` Enhancement-mode...

floor Price/Ceiling Price

Part Number:
2SK3760
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:






Application

`  Low drain-source ON resistance: RDS (ON) = 1.7 (typ.)
`  High forward transfer admittance: |Yfs| = 2.5S (typ.)
`  Low leakage current: IDSS = 100 A (VDS = 600 V)
`  Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)



Specifications

Characteristics
Symbol
Ratings
Unit
Drain-source voltage
VDSS
600
V
Drain-gate voltage (RGS=20k)
VDGR
600
V
Gate?source voltage
VGSS
±30
V
Drain current DC                    (Note1)
ID
3.5
A
Pulse (t =1ms)
                        (Note1)
IDP
14
Drain power dissipation (Tc = 25)
PD
60
W
Single pulse avalanche energy
                                               (Note 2)
EAS
6.3
mJ
Avalanche current
IAR
3.5
A
Repetitive avalanche energy (Note 3)
EAR
6
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
-55 ~ +150





Description






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