2SK3759

Features: Application` Low drain-source ON resistance: RDS (ON) = 0.75 (typ.)` High forward transfer admittance: |Yfs| = 6.5S (typ.)` Low leakage current: IDSS = 100 A (VDS = 500 V)` Enhancement-mode: V th = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristics Symbol Ratings Unit ...

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SeekIC No. : 004226871 Detail

2SK3759: Features: Application` Low drain-source ON resistance: RDS (ON) = 0.75 (typ.)` High forward transfer admittance: |Yfs| = 6.5S (typ.)` Low leakage current: IDSS = 100 A (VDS = 500 V)` Enhancement-mod...

floor Price/Ceiling Price

Part Number:
2SK3759
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:






Application

`  Low drain-source ON resistance: RDS (ON) = 0.75 (typ.)
`  High forward transfer admittance: |Yfs| = 6.5S (typ.)
`  Low leakage current: IDSS = 100 A (VDS = 500 V)
`  Enhancement-mode: V th = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)



Specifications

Characteristics
Symbol
Ratings
Unit
Drain-source voltage
VDSS
500
V
Drain-gate voltage (RGS=20k)
VDGR
500
V
Gate?source voltage
VGSS
±30
V
Drain current DC (Note1)
ID
8
A
Pulse (t =1ms)
(Note1)
IDP
32
Drain power dissipation (Tc = 25)
PD
74
W
Single pulse avalanche energy
                                       (Note 2)
EAS
48
mJ
Avalanche current
IAR
8
A
Repetitive avalanche energy (Note 3)
EAR
7.4
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
-55 ~ +150





Description






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