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2SK3754

Features: Application• 4.5-V gate drive• Low drain-source ON resistance: RDS (ON) = 71 m (typ.)• High forward transfer admittance: |Yfs| = 5.0 S (typ.)• Low leakage current: IDSS = 10 A (max) (VDS = 30 V)• Enhancement-model: Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA)Spec...

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SeekIC No. : 004226870 Detail

2SK3754: Features: Application• 4.5-V gate drive• Low drain-source ON resistance: RDS (ON) = 71 m (typ.)• High forward transfer admittance: |Yfs| = 5.0 S (typ.)• Low leakage current: ...

2SK3754 Data Sheet

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Part Number:
2SK3754
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:






Application

• 4.5-V gate drive
• Low drain-source ON resistance: RDS (ON) = 71 m (typ.)
• High forward transfer admittance: |Yfs| = 5.0 S (typ.)
• Low leakage current: IDSS = 10 A (max) (VDS = 30 V)
• Enhancement-model: Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristics
Symbol
Ratings
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS=20k)
VDGR
30
V
Gate?source voltage
VGSS
±20
V
Drain current DC (Note 1)
ID
5
A
Pulse (Note 1)
IDP
15
Drain power dissipation (Tc = 25)
PD
25
W
Single pulse avalanche energy
                                         (Note 2)
EAS
4.0
mJ
Avalanche current
IAR
2.5
A
Repetitive avalanche energy (Note 3)
EAR
2.5
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
-55 ~ +150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).






Description






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