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2SK3749

Features: • Gate can be driven by 2.5 V• Because of its high input impedance, there's no need to consider drive currentSpecifications Drain to Source Voltage (VGS = 0 V)Gate to Source Voltage (VDS = 0 V)Drain Current (DC)Drain Current (pulse) NoteTotal Power DissipationChannel Temper...

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SeekIC No. : 004226868 Detail

2SK3749: Features: • Gate can be driven by 2.5 V• Because of its high input impedance, there's no need to consider drive currentSpecifications Drain to Source Voltage (VGS = 0 V)Gate to Source ...

2SK3749 Data Sheet

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Part Number:
2SK3749
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• Gate can be driven by 2.5 V
• Because of its high input impedance, there's no need to consider drive current




Specifications

Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note
Total Power Dissipation
Channel Temperature
Storage Temperature
Note PW 10 ms, Duty Cycle 50%		 VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg		 50
±7.0
±100
±200
150
150
−55 to +150		 V
V
mA
mA
mW

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage xceeding the rated voltage may be applied to this device.






Description

The 2SK3749 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 2.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras.






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