MOSFET HIGH-VOLTAGE POWER MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 1.5 KV | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 4 A | ||
Resistance Drain-Source RDS (on) : | 5 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-3PML | Packaging : | Tray |
Absolute maximum ratings | |
---|---|
VDSS [V] | 1500 |
VGSS [V] | 20 |
ID [A] | 4 |
PD [W] | 65
Tc=25°C |
Electrical characteristics | |
---|---|
RDS(on) typ [] VGS=10V ID [A]=2 |
5 |
VGS(off) min [V] | 2.5 |
VGS(off) max [V] | 3.5 |
|yfs| typ [S] | 2.8 |
Ciss typ [pF] | 790 |
Qg typ [nC] | 80 |
Unit | ||||
・ | VDSS | 1500 | V | |
・ | VGSS | ±20 | V | |
(DC) | ID | 4 | A | |
() | IDP | PW10ms, duty cycle1% | 8 | A |
PD | 3.0 | W | ||
Tc=25 |
65 | W | ||
Tch | 150 | |||
Tstg | -55 to +150 | |||
()*1 | EAS | 170 | mJ | |
*2 | IAV | 4 | A |