MOSFET HIGH-VOLTAGE POWER MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 1.5 KV | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 2 A | ||
Resistance Drain-Source RDS (on) : | 13 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-3PML | Packaging : | Tray |
Parameter | Symbol |
Conditions |
Ratings | Unit |
Drain-to-Source Voltage | VDSS | 1500 | V | |
Gate-to-Source Voltage | VGSS | ±20 | V | |
Drain Current (DC) | ID | 2 | A | |
Drain Current (Pulse) | IDP | PW10ms, duty cycle1% | 4 | A |
Allowable Power Dissipation | PD | 3.0 | W | |
Tc=25 |
50 | W | ||
Channel Temperature | Tch | 150 | ||
Storage Temperature | Tstg | -55 to +150 | ||
Avalanche Enargy (Single Pulse) *1 | EAS | 42 | mJ | |
Avalanche Current *2 | IAV | 2 | A |
Absolute maximum ratings | |
---|---|
VDSS [V] | 1500 |
VGSS [V] | 20 |
ID [A] | 2 |
PD [W] | 50
Tc=25°C |
Electrical characteristics | |
---|---|
RDS(on) typ [] VGS=10V ID [A]=1 |
10 |
VGS(off) min [V] | 2.5 |
VGS(off) max [V] | 3.5 |
|yfs| typ [S] | 1.4 |
Ciss typ [pF] | 380 |
Qg typ [nC] | 37.5 |