2SK3747, US $ 2.42-3.2 , ON Semiconductor, 2SK3747 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00157571 Detail

2SK3747: MOSFET HIGH-VOLTAGE POWER MOSFET

2SK3747 Data Sheet

US $ 2.42~3.2 / Piece | Get Latest Price

Part Number:: 2SK3747
Mfg:: ON Semiconductor
Supply Ability:: 5000

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$3.2
$2.89
$2.66
$2.42

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Upload time: 2024/5/15

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Recent History
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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	1.5 KV
Gate-Source Breakdown Voltage :	20 V	Continuous Drain Current :	2 A
Resistance Drain-Source RDS (on) :	13 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-3PML	Packaging :	Tray

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 13 Ohms
Packaging : Tray
Drain-Source Breakdown Voltage : 1.5 KV
Package / Case : TO-3PML

Features:

• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• High reliability (Adoption of HVP process).
• Attachment workability is good by Mica-less package.
• Avalanche resistance guarantee.

Pinout

Specifications

Parameter	Symbol	Conditions	Ratings	Unit
Drain-to-Source Voltage	V_DSS		1500	V
Gate-to-Source Voltage	V_GSS		±20	V
Drain Current (DC)	I_D		2	A
Drain Current (Pulse)	I_DP	PW10ms, duty cycle1%	4	A
Allowable Power Dissipation	P_D		3.0	W
Allowable Power Dissipation	P_D	Tc=25	50	W
Channel Temperature	T_ch		150
Storage Temperature	T_stg		-55 to +150
Avalanche Enargy (Single Pulse) *1	E_AS		42	mJ
Avalanche Current *2	I_AV		2	A

*1 V_DD=99V, L=20mH, I_AV=2A
*2 L20mH, single pulse

Absolute maximum ratings
VDSS [V]	1500
VGSS [V]	20
ID [A]	2
PD [W]	50 Tc=25°C

Electrical characteristics
RDS(on) typ [] VGS=10V ID [A]=1	10
VGS(off) min [V]	2.5
VGS(off) max [V]	3.5
\|yfs\| typ [S]	1.4
Ciss typ [pF]	380
Qg typ [nC]	37.5

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2SK3747

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