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2SK3746

MOSFET HIGH-VOLTAGE POWER MOSFET

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SeekIC No. : 00154641 Detail

2SK3746: MOSFET HIGH-VOLTAGE POWER MOSFET

2SK3746 Data Sheet

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Part Number:
2SK3746
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/15

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 10 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3PB-3 Packaging : Tray    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 10 Ohms
Drain-Source Breakdown Voltage : 1500 V
Packaging : Tray
Package / Case : TO-3PB-3


Features:

• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• High reliability (Adoption of HVP process).
• Avalanche resistance guarantee






Pinout






Specifications

Absolute maximum ratings
VDSS [V] 1500
VGSS [V] 20
ID [A] 2
PD [W] 110
Tc=25°C
Electrical characteristics
RDS(on) typ []
VGS=10V
ID [A]=1		 10
VGS(off) min [V] 2.5
VGS(off) max [V] 3.5
|yfs| typ [S] 1.4
Ciss typ [pF] 380
Qg typ [nC] 37.5


Parameter Symbol

Conditions

 Ratings Unit
Drain-to-Source Voltage VDSS

1500 V
Gate-to-Source Voltage VGSS

±20 V
Drain Current (DC) ID*

2 A
Drain Current (Pulse) IDP PW10ms, duty cycle1% 4 A
Allowable Power Dissipation PD

2.5 W

Tc=25

 110 W
Channel Temperature Tch

150
Storage Temperature Tstg

-55 to +150
Avalanche Enargy (Single Pulse) *1 EAS

42 mJ
Avalanche Current *2 IAV

2 A
*1 VDD=99V, L=20mH, IAV=2A
*2 L20mH, Single pulse






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