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2SK3745LS

MOSFET HIGH-VOLTAGE POWER MOSFET

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SeekIC No. : 00153679 Detail

2SK3745LS: MOSFET HIGH-VOLTAGE POWER MOSFET

2SK3745LS Data Sheet

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Part Number:
2SK3745LS
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 10 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220FP-3 Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Package / Case : TO-220FP-3
Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 10 Ohms
Drain-Source Breakdown Voltage : 1500 V


Application

• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• High reliability (Adoption of HVP process).
• Micaless package facilitating mounting.
• Avalanche resistance guarantee.




Pinout






Specifications

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 1500 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID* 2 A
Drain Current (Pulse) IDP 4 A
Allowable Power Dissipation PD 2.0 W
Tc=25 35 W
Channel Temperature Tch 150
Storage Temperature Tstg -55 to +150
Avalanche Enargy (Single Pulse) *1 EAS 42 mJ
Avalanche Current *2 IAV 2 A
*Shows chip capability
*1 VDD=99V, L=20mH, IAV=2A
*2 L20mH, single pulse



Absolute maximum ratings
VDSS [V] 1500
VGSS [V] 20
ID [A] 2
PD [W] 35
Tc=25°C
Electrical characteristics
RDS(on) typ []
VGS=10V
ID [A]=1		 10
VGS(off) min [V] 2.5
VGS(off) max [V] 3.5
|yfs| typ [S] 1.4
Ciss typ [pF] 380
Qg typ [nC] 37.5





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