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Features: Application• High breakdown voltage: VGDS = −100 V (min)• High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)Specifications Characteristics Symbol Rating Unit Gate-drain voltage VGDS −100 V Gate current IG 10 mA Drain power dissipation PD 400...

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SeekIC No. : 004226862 Detail

2SK373: Features: Application• High breakdown voltage: VGDS = −100 V (min)• High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)Specifications Characteristics Symbol Rati...

2SK373 Data Sheet

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Part Number:: 2SK373
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2024/5/14

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Product Details

Description

Features:

Application

• High breakdown voltage: V_GDS = −100 V (min)
• High input impedance: I_GSS = −1.0 nA (max) (V_GS= −80 V)

Specifications

Characteristics	Symbol	Rating	Unit
Gate-drain voltage	V_GDS	−100	V
Gate current	I_G	10	mA
Drain power dissipation	P_D	400	mW
Junction temperature	T_j	125
Storage temperature range	T_stg	−55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Description

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2SK373

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