2SK3720-5-TB-E

Series: -
Transistor Type: N-Channel
Current - Test: -
Power - Output: -
Packaging: Cut Tape (CT)Alternate Packaging
Voltage - Rated: 15V
Current Rating: 30mA
Package / Case: TO-236-3, SC-59, SOT-23-3
Voltage - Test: 10V
Frequency: 100MHz
Noise Figure: 2dB
Supplier Device Package: 3-CP
Manufacturer: SANYO Semiconductor (U.S.A) Corporation
Gain: 35dB


Description

The 2SK3720-5-TB-E is one member of the 2SK3720 family which is designed as the N-Channel Silicon MOSFET device that has four points of features:(1)low noise; (2)high power gain; (3)small reverse transfer capacitance.

The absolute maximum ratings of the 2SK3720-5-TB-E can be summarized as:(1)Drain-to-Source Voltage: 15 V;(2)Gate-to-Source Voltage: ±5 V;(3)Drain Current (DC): 30 mA;(4)Drain Current (Pulse): 30 mA;(5)Allowable Power Dissipation: 0.2 W;(6)Channel Temperature: 150 °C;(7)Storage Temperature: -55 to +150 °C.

The electrical characteristics of this device can be summarized as:(1)Drain-to-Source Breakdown Voltage: 15 V;(2)Zero-Gate Voltage Drain Current: +/- 10 nA;(3)Gate-to-Source Leakage Current: ±10 nA;(4)Cutoff Voltage: -2.2 V;(5)Forward Transfer Admittance: 11 to 16 S;(6)Input Capacitance: 2.4 pF;(7)power gain: 35 dB;(8)Noise Figure: 2.0 dB. If you want to know more information about the 2SK3720-5-TB-E, please download the datasheet in www.seekic.com or www.chinaicmart.com .