Features: Application• High breakdown voltage: VGDS = −40 V• High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V)• Low RDS (ON): RDS (ON) = 20 (typ.) (IDSS = 15 mA)• Small packageSpecifications Characteristics Symbol Rating Unit Gate-drain voltage ...
2SK372: Features: Application• High breakdown voltage: VGDS = −40 V• High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V)• Low RDS (ON): RDS (ON) = 20 (typ.) (IDSS =...
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Characteristics | Symbol | Rating | Unit |
Gate-drain voltage | VGDS | −40 | V |
Gate current | IG | 10 | mA |
Drain power dissipation | PD | 200 | mW |
Junction temperature | Tj | 125 | |
Storage temperature range | Tstg | −55~125 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).