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2SK372

Features: Application• High breakdown voltage: VGDS = −40 V• High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V)• Low RDS (ON): RDS (ON) = 20 (typ.) (IDSS = 15 mA)• Small packageSpecifications Characteristics Symbol Rating Unit Gate-drain voltage ...

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SeekIC No. : 004226857 Detail

2SK372: Features: Application• High breakdown voltage: VGDS = −40 V• High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V)• Low RDS (ON): RDS (ON) = 20 (typ.) (IDSS =...

2SK372 Data Sheet

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Part Number:
2SK372
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:






Application

• High breakdown voltage: VGDS = −40 V
• High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V)
• Low RDS (ON): RDS (ON) = 20 (typ.) (IDSS = 15 mA)
• Small package


Specifications

Characteristics Symbol Rating Unit
Gate-drain voltage VGDS −40 V
Gate current IG 10 mA
Drain power dissipation PD 200 mW
Junction temperature Tj 125
Storage temperature range Tstg −55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).






Description






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