Features: • Compact package• High forward transfer admittance 1400 S TYP. (IDSS = 250 A)• Includes diode and high resistance at G-SSpecifications Drain to Source Voltage (VGS = −1.0 V)Gate to Drain VoltageDrain CurrentGate CurrentTotal Power DissipationJunction Temperatur...
2SK3717: Features: • Compact package• High forward transfer admittance 1400 S TYP. (IDSS = 250 A)• Includes diode and high resistance at G-SSpecifications Drain to Source Voltage (VGS = &...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Drain to Source Voltage (VGS = −1.0 V) Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Junction Temperature Storage Temperature |
VDSX VGDO ID IG PT Tj Tstg |
20 −20 10 10 100 125 -55 to +125 |
V V mA mA mW |