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2SK3715

Features: • Super low on-state resistanceRDS(on)1 = 6.0 m MAX. (VGS = 10 V, ID = 38 A)RDS(on)2 = 9.5 m MAX. (VGS = 4 V, ID = 38 A)• Low Ciss: Ciss = 8400 pF TYP.• Built-in gate protection diodeSpecifications Drain to Source Voltage(VGS = 0V)Gate to Source Voltage(VDS = 0V)Drain...

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2SK3715: Features: • Super low on-state resistanceRDS(on)1 = 6.0 m MAX. (VGS = 10 V, ID = 38 A)RDS(on)2 = 9.5 m MAX. (VGS = 4 V, ID = 38 A)• Low Ciss: Ciss = 8400 pF TYP.• Built-in gate pro...

2SK3715 Data Sheet

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Part Number:
2SK3715
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Super low on-state resistance
RDS(on)1 = 6.0 m MAX. (VGS = 10 V, ID = 38 A)
RDS(on)2 = 9.5 m MAX. (VGS = 4 V, ID = 38 A)
• Low Ciss: Ciss = 8400 pF TYP.
• Built-in gate protection diode




Specifications

Drain to Source Voltage(VGS = 0V)
Gate to Source Voltage(VDS = 0V)
Drain Current (DC)(TC = 25)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25)
Total Power Dissipation (TA = 25)
Channel Temperature
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2		 VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS		 60
±20
±75
±300
40
2.0
150
-55 to +150
67
450		 V
V
A
A
W
W


A
mJ
Notes 1. PW 10 s, Duty Cycle 1%
2. Starting Tch = 25 , VDD = 30 V, RG = 25 , VGS = 20 0 V




Description

The 2SK3715 is N-channel MOS Field Effect Transistor designed for high current switching applications.




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