Features: • Super low on-state resistanceRDS(on)1 = 13 m MAX. (VGS = 10 V, ID = 25 A)RDS(on)2 = 22 m MAX. (VGS = 4.0 V, ID = 25 A)• Low Ciss: Ciss = 3200 pF TYP.• Built-in gate protection diode• Super low on-state resistanceRDS(on)1 = 13 m MAX. (VGS = 10 V, ID = 25 A)RDS(on...
2SK3714: Features: • Super low on-state resistanceRDS(on)1 = 13 m MAX. (VGS = 10 V, ID = 25 A)RDS(on)2 = 22 m MAX. (VGS = 4.0 V, ID = 25 A)• Low Ciss: Ciss = 3200 pF TYP.• Built-in gate pro...
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Drain to Source Voltage(VGS = 0V) Gate to Source Voltage(VDS = 0V) Drain Current (DC)(TC = 25) Drain Current (pulse) Note1 Total Power Dissipation (TC = 25) Total Power Dissipation (TA = 25) Channel Temperature Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 |
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS |
60 ±20 ±50 ±160 35 2.0 150 −55 to +150 31 96 |
V V A A W W A mJ |
Drain to Source Voltage(VGS = 0V) Gate to Source Voltage(VDS = 0V) Drain Current (DC)(TC = 25) Drain Current (pulse) Note1 Total Power Dissipation (TC = 25) Total Power Dissipation (TA = 25) Channel Temperature Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 |
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS |
60 ±20 ±50 ±160 35 2.0 150 −55 to +150 31 96 |
V V A A W W A mJ |