2SK3707

MOSFET NCH 4V DRIVE SERIES

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2SK3707 Picture
SeekIC No. : 00162119 Detail

2SK3707: MOSFET NCH 4V DRIVE SERIES

floor Price/Ceiling Price

Part Number:
2SK3707
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Packaging : Bulk    

Description

Transistor Polarity :
Drain-Source Breakdown Voltage :
Gate-Source Breakdown Voltage :
Continuous Drain Current :
Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging : Bulk


Pinout






Specifications

Absolute maximum ratings
VDSS [V] 100
VGSS [V] 20
ID [A] 20
PD [W] 25
Tc=25°C
Electrical characteristics
RDS(on) typ []
VGS=10V
ID [A]=10
0.045
RDS(on) typ []
VGS=4V
ID [A]=10
0.056
VGS(off) min [V] 1.2
VGS(off) max [V] 2.6
|yfs| typ [S] 17
Ciss typ [pF] 2150
Qg typ [nC] 44





Description

The 2SK3707 is a kind of product with general-Purpose Switching Device Applications. it has 4 features: 1. Low ON-resistance; 2.4V drive; 3.Motor drive, DC / DC converter; 4.Avalanche resistance guarantee.
Here are some Absolute Maximum Ratings of the 2SK3707 when Ta = 25°C: 1. Drain-to-Source Voltage is 100 V; 2.Gate-to-Source Voltage is ±20 V; 3.Drain Current (DC) is 20A; 4.when PW10ms, duty cycle1%, Drain Current (Pulse) is 80A; 5.Allowable Power Dissipation is 2.0W, when Tc=25°C, it is 25W; 6.Channel Temperature is 150°C; 7.Storage Temperature is from -55 to +150 °C; 8.Avalanche Energy (Single Pulse) is 125mJ; 9.Avalanche Current is 20A.
When Ta = 25°C, the Electrical Characteristics of 2SK3707 are as following mentioned:1.when ID=1mA, VGS=0, Drain-to-Source Breakdown Voltage is at least 100V; 2. when VDS=100V, VGS=0, Zero-Gate Voltage Drain Current is at most 1A; 3.when VGS= ±16V, VDS=0, Gate-to-Source Leakage Current is ±10 A; 4.when VDS=10V, ID=1mA, Cutoff Voltage is from 1.2 to 2.6V; 5. when VDS=10V, ID=13A, Forward Transfer Admittance is 11 to 17S; 6.when ID=13A, VGS=10V, Static Drain-to-Source On-State Resistance is 45 to 60 m, when ID=13A, VGS=4V, Static Drain-to-Source On-State Resistance is 56 to 80 m.
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