2SK3704

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Drain-Source Breakdown Voltage : 60 V
Package / Case : TO-220FP-3
Resistance Drain-Source RDS (on) : 14 mOhms
Continuous Drain Current : 45 A


Pinout






Specifications

Absolute maximum ratings
VDSS [V]	60
VGSS [V]	20
ID [A]	45
PD [W]	30 Tc=25°C

Electrical characteristics
RDS(on) typ [] VGS=10V ID [A]=23	0.0105
RDS(on) typ [] VGS=4V ID [A]=23	0.015
VGS(off) min [V]	1.2
VGS(off) max [V]	2.6
|yfs| typ [S]	32
Ciss typ [pF]	3500
Qg typ [nC]	67

Description

The 2SK3704 is designed as one kind of N-channel silicon MOSFET that can be used in general-purpose switching device applications. Features of the 2SK3704 are:(1)Low ON-resistance; (2)4V drive; (3)Motor driver, DC / DC converter; (4)Avalanche resistance guarantee.

The absolute maximum ratings of the 2SK3704 can be summarized as:(1)Drain-to-Source Voltage: 60 V;(2)Gate-to-Source Voltage: ±20 V;(3)Drain Current (DC): 45 A;(4)Drain Current (Pulse): 180 A;(5)Allowable Power Dissipation: 2.0 W;(6)Allowable Power Dissipation Tc=25°C: 30 W;(7)Channel Temperature: 150 °C;(8)Storage Temperature: -55 to +150 °C;(9)Avalanche Enargy (Single Pulse): 303 mJ;(10)Avalanche Current: 45 A.

The electrical characteristics at Ta=25°C of the 2SK3704 can be summarized as:(1)Drain-to-Source Breakdown Voltage: 60 V;(2)Zero-Gate Voltage Drain Current: 1 uA;(3)Gate-to-Source Leakage Current: ±10 uA;(4)Cutoff Voltage: 1.2 to 2.6 V;(5)Forward Transfer Admittance: 22 to 32 S. If you want to know more information such as the electrical characteristics about the 2SK3704, please download the datasheet in www.seekic.com or www.chinaicmart.com .