2SK3703

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 20 mOhms
Gate-Source Breakdown Voltage : 20 V
Packaging : Bulk
Continuous Drain Current : 30 A
Drain-Source Breakdown Voltage : 60 V
Package / Case : TO-220ML


Pinout






Specifications

Absolute maximum ratings
VDSS [V]	60
VGSS [V]	20
ID [A]	30
PD [W]	25 Tc=25°C

Electrical characteristics
RDS(on) typ [] VGS=10V ID [A]=15	0.02
RDS(on) typ [] VGS=4V ID [A]=15	0.028
VGS(off) min [V]	1.2
VGS(off) max [V]	2.6
|yfs| typ [S]	22
Ciss typ [pF]	1780
Qg typ [nC]	40

Description

The 2SK3703 is designed as one kind of N-channel silicon MOSFET that can be used in general-purpose switching device applications. Features of the 2SK3703 are:(1)Low ON-resistance; (2)4V drive; (3)Motor driver, DC / DC converter; (4)Avalanche resistance guarantee.

The absolute maximum ratings of the 2SK3703 can be summarized as:(1)Drain-to-Source Voltage: 60 V;(2)Gate-to-Source Voltage: ±20 V;(3)Drain Current (DC): 30 A;(4)Drain Current (Pulse): 120 A;(5)Allowable Power Dissipation: 2.0 W;(6)Allowable Power Dissipation Tc=25°C: 25 W;(7)Channel Temperature: 150 °C;(8)Storage Temperature: -55 to +150 °C.

The electrical characteristics at Ta=25°C of the 2SK3703 can be summarized as:(1)Drain-to-Source Breakdown Voltage: 60 V;(2)Zero-Gate Voltage Drain Current: 1 uA;(3)Gate-to-Source Leakage Current: ±10 uA;(4)Cutoff Voltage: 2.6 V;(5)Forward Transfer Admittance: 13 to 22 S. If you want to know more information such as the electrical characteristics about the 2SK3703, please download the datasheet in www.seekic.com or www.chinaicmart.com .