2SK370

The 2SK370 is one memeber of the 2SK3702 family which is designed as one kind of N-channel silicon MOSFET that can be used in general-purpose switching device applications. Features of the 2SK370 are:(1)Low drain-source ON resistance: RDS (ON) = 2.0 (typ.); (2)High forward transfer admittance: |Yfs| = 4.5 S (typ.); (3)Low leakage current: IDSS = 100 uA (max) (VDS = 720 V); (4)Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA).

The absolute maximum ratings of the 2SK370 can be summarized as:(1)Drain-to-Source Voltage: 900 V;(2)Gate-to-Source Voltage: ±30 V;(3)Drain Current (DC): 5 A;(4)Drain Current (Pulse): 15 A;(5)Allowable Power Dissipation: 150 W;(6)Allowable Power Dissipation Tc=25°C: 20 W;(7)Channel Temperature: 150 °C;(8)Storage Temperature: -55 to +150 °C;(9)Avalanche Energy (Single Pulse): 23 mJ;(10)Avalanche Current: 5 A.

The electrical characteristics at Ta=25°C of the 2SK370 can be summarized as:(1)Drain-to-Source Breakdown Voltage: 900 V;(2)Zero-Gate Voltage Drain Current: 100 uA;(3)Gate-to-Source breakdown voltage: ±30 V;(4)Drain cut-OFF current: 100 uA;(5)Forward Transfer Admittance: 2.0 to 4.5 S. If you want to know more information such as the electrical characteristics about the 2SK370, please download the datasheet in www.seekic.com or www.chinaicmart.com .