2SK369

The 2SK369 is a kind of field effect transistor. It is silicon N channel junction type. The device is designed for low noise audio amplifier applications. There are some features of 2SK369 as follows: (1)high breakdown voltage: VGDS=-40 V (min); (2)high input impedance: IGSS=-1 nA (Max) (VGS=-30 V); (3)super low noise: NF=1.0 dB (typ) (VDS=10 V, ID=5 mA, f=1 kHz, RG=100); (4)high |Yfs|: |Yfs|=40 mS (typ) (VDS=10 V, VGS=0, IDSS=5 mA); (5)suitable for use as first stage for equalizer and MC head amplifiers.

What comes next is the maximum ratings of 2SK369 (Ta=25): (1)gate-drain voltage, VGDS: -40 V; (2)gate current, IG: 10 mA; (3)drain power dissipation, PD: 400 mW; (4)junction temperature, Tj: 125; (5)storage temperature range, Tstg: -55 to 125.

The following is the electrical characteristics of 2SK369 (Ta=25): (1)gate cut-off current, IGSS: -1.0 nA max at VGS=-30 V, VDS=0 V; (2)drain current, IDSS: 5.0 mA min and 30 mA max at VDS=10 V, VGS=0 V; (3)gate-drain breakdown voltage, V(BR)GDS: -40 V min at IG=-100A, VDS=0 V; (4)gate-source cut-off voltage, VGS(OFF): -0.3 V min and -1.2 V max at VDS=10 V, ID=0.1A; (6)forward transfer admittance, |Yfs|: 25 mS min and 40 mS typ at VDS=10 V, VGS=0, f=1 kHz; (7)input capacitance, Ciss: 75 pF typ at VDS=10 V, VGS=0 V, f=1 MHz; (8)reverse transfer capacitance, Crss: 15 pF typ at VGD=-10 V, ID=0, f=1 MHz; (9)noise figure, NF: 5 dB typ and 10 dB max at VDS=10 V, RG=100, ID=5 mA, f=100 Hz; 1 dB typ and 2 dB max at VDS=10 V, RG=100, ID=5 mA, f=1 KHz.