2SK3670

The 2SK3670 is designed as one kind of field effect transistor that has five points of features:(1)2.5V-Gate Drive; (2)Low drain-source ON resistance: RDS (ON) = 1.0 (typ.); (3)High forward transfer admittance: |Yfs| = 2.1 S (typ.); (4)Low leakage current: IDSS = 100 uA (max) (VDS = 150 V); (5)Enhancement mode: Vth = 0.5~1.3 V (VDS = 10 V, ID =200uA).

The absolute maximum ratings of the 2SK3670 can be summarized as:(1)Drain-source voltage: 150 V;(2)Drain-gate voltage (RGS = 20 k): 150 V;(3)Gate-source voltage: ±12 V;(4)Drain power dissipation: 0.9 W;(5)Single pulse avalanche energy: 41 mJ;(6)Avalanche current: 0.67 A;(7)Repetitive avalanche energy: 0.09 mJ;(8)Channel temperature: 150 °C;(9)Storage temperature range: -55 to 150 °C. If you want to know more information such as the electrical characteristics about the 2SK3670, please download the datasheet in www.seekic.com or www.chinaicmart.com .