2SK367

The 2SK367 is a kind of field effect transistor. It is silicon N channel junction type. The device is designed for audio, high voltage amplifier and constant current applications. There are some features as follows: (1)high breakdown voltage: VGDS=-100 V (min); (2)high input impedance: IGSS=-1 nA (Max) (VGS=-80 V); (3)small package.

What comes next is about the maximum ratings (Ta=25): (1)gate-drain voltage, VGDS: -100 V; (2)gate current, IG: 10 mA; (3)drain power dissipation, PD: 200 mW; (4)junction temperature, Tj: 125; (5)storage temperature range, Tstg: -55 to 125.

The following is about the electrical characteristics (Ta=25): (1)gate cut-off current, IGSS: -1.0 nA max at VGS=-80 V, VDS=0 V; (2)drain current, IDSS: 0.6 mA min and 6.5 mA max at VDS=10 V, VGS=0 V; (3)gate-drain breakdown voltage, V(BR)GDS: -100 V min at IG=-100A, VDS=0 V; (4)gate-source cut-off voltage, VGS(OFF): -0.4 V min and -3.5 V max at VDS=10 V, ID=0.1A; (6)forward transfer admittance, |Yfs|: 1.5 mS min and 4.6 mS typ at VDS=10 V, VGS=0, f=1 kHz; (7)input capacitance, Ciss: 13 pF typ at VDS=10 V, VGS=0 V, f=1 MHz; (8)reverse transfer capacitance, Crss: 3 pF typ at VGD=10 V, ID=0, f=1 MHz; (9)noise figure, NF: 0.5 dB typ at VDS=10 V, VGS=0, RG=100 k, f=100 Hz.