2SK3667(STA4.Q)

The 2SK3667(STA4.Q) is one member of the 2SK366 family which is designed as the effect transistor (silicon N channel junction type). Features of the 2SK3667(STA4.Q) are:(1)Low drain-source ON resistance: RDS (ON) = 0.75 (typ.); (2)High forward transfer admittance: |Yfs| = 5.5S (typ.); (3)Low leakage current: IDSS = 100uA (VDS = 600 V); (4)Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA).

The absolute maximum ratings of the 2SK3667(STA4.Q) can be summarized as:(1)Drain-source voltage: 600 V;(2)Drain-gate voltage (RGS = 20 k): 600 V;(3)Gate-source voltage: ±30 V;(4)Drain power dissipation (Tc = 25°C): 45 W;(5)Single pulse avalanche energye: 189 mJ;(6)Avalanche current: 7.5 A;(7)Repetitive avalanche energy: 4.5 mJ;(8)Channel temperature: 150 °C;(9)Storage temperature range: -55 to 150 °C.

The electrical characteristics (Ta = 25°C) of the 2SK3667(STA4.Q) can be summarized as:(1)Gate leakage current: ±10 A;(2)Gate-source breakdown voltage: ±30 V;(3)Drain cut-off current: 100 A;(4)Drain-source breakdown voltage: 600 V;(5)Gate threshold voltage: 2.0 to 4.0 V;(6)Drain-source ON resistance: 0.75 to 1.0 ;(7)Forward transfer admittance: 1.5 to 5.5 S. If you want to know more information such as the electrical characteristics about the 2SK3667(STA4.Q), please download the datasheet in www.seekic.com or www.chinaicmart.com .