2SK3666

The 2SK3666 is one member of the 2SK366 family which is designed as the N-channel junction silicon FET that can be used in Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications. Features of the 2SK3666 are:(1)Low drain-source ON resistance: RDS (ON) = 0.75 (typ.); (2)High forward transfer admittance: |Yfs| = 5.5S (typ.); (3)Low leakage current: IDSS = 100uA (VDS = 600 V); (4)Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA).

The absolute maximum ratings of the 2SK3666 can be summarized as:(1)Drain-source voltage: 30 V;(2)Drain-gate voltage (RGS = 20 k): -30 V;(3)Gate Current: 10 mA;(4)Drain Current: 10 mA;(5)Allowable Power Dissipation: 200 mW;(6)Junction Temperature: 150 °C;(7)Storage temperature range: -55 to 150 °C.

The electrical characteristics (Ta = 25°C) of the 2SK3666 can be summarized as:(1)Gate leakage current: -1.0 nA;(2)Gate-to-Drain Breakdown Voltage: -30 V;(3)Cutoff Voltage: -0.18 to -2.2 V;(4)Drain Current: 0.6 mA to 6.0 mA;(5)Forward Transfer Admittance: 3.0 to 6.5 mS;(6)Input Capacitance: 4 pF;(7)Input Capacitance: 1.1 pF;(8)Static Drain-to-Source On-State Resistance: 200 . If you want to know more information such as the electrical characteristics about the 2SK3666, please download the datasheet in www.seekic.com or www.chinaicmart.com .