Application`Low drain-source ON resistance: RDS (ON) = 9.4 m (typ.)`High forward transfer admittance: |Yfs| = 55 S (typ.)`Low leakage current: IDSS = 100 A (max) (VDS = 60 V)`Enhancement-mode : Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)Specifications Item Symbol Rating Unit Drai...
2SK3662: Application`Low drain-source ON resistance: RDS (ON) = 9.4 m (typ.)`High forward transfer admittance: |Yfs| = 55 S (typ.)`Low leakage current: IDSS = 100 A (max) (VDS = 60 V)`Enhancement-mode : Vth ...
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Item |
Symbol |
Rating |
Unit | |
Drain−source voltage |
VDSS |
60 |
V | |
Drain−gate voltage (RGS = 20 k) |
VDGR |
60 |
V | |
Gate−source voltage |
VGSS |
±20 |
V | |
Drain current | DC (Note 1) |
ID |
35 |
A |
Pulse (Note 1) |
IDP |
105 |
A | |
Drain power dissipation |
PD |
35 |
W | |
Single pulse avalanche energy (Note 2) |
EAS |
204 |
mJ | |
Avalanche current |
IAR |
35 |
A | |
Repetitive avalanche energy (Note 3) |
EAR |
3.5 |
mJ | |
Channel temperature |
Tch |
150 |
°C | |
Storage temperature range |
Tstg |
-55to+150 |
°C |