2SK365

The 2SK365 is a kind of field effect transistor. It is silicon N channel junction type. The device is designed for audio amplifier, analog switch, constant current and impedance converter applications. There are some features of 2SK365 as follows: (1)high breakdown voltage: VGDS=-50 V; (2)high input impedance: IGSS=-1 nA (Max) (VGS=-30 V); (3)low RDS(ON): RDS(ON)=80 (typ) (IDSS=5 mA); (4)small package.

What comes next is the maximum ratings of 2SK365 (Ta=25): (1)gate-drain voltage, VGDS: -50 V; (2)gate current, IG: 10 mA; (3)drain power dissipation, PD: 200 mW; (4)junction temperature, Tj: 125; (5)storage temperature range, Tstg: -55 to 125.

The following is the electrical characteristics of 2SK365 (Ta=25): (1)gate cut-off current, IGSS: -1.0 nA max at VGS=-30 V, VDS=0 V; (2)drain current, IDSS: 1.2 mA min and 14 mA max at VDS=10 V, VGS=0 V; (3)gate-drain breakdown voltage, V(BR)GDS: -50 V min at IG=-100A, VDS=0 V; (4)gate-source cut-off voltage, VGS(OFF): -0.25 V min and -1.5 V max at VDS=10 V, ID=0.1A; (6)forward transfer admittance, |Yfs|: 5.0 mS min and 19 mS typ at VDS=10 V, VGS=0, f=1 kHz; (7)input capacitance, Ciss: 13 pF typ at VDS=10 V, VGS=0 V, f=1 MHz; (8)reverse transfer capacitance, Crss: 3 pF typ at VGD=10 V, ID=0, f=1 MHz; (9)drain-source ON resistance, RDS(ON): 80 typ at VDS=10 mV, VGS=0.