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2SK3640

Features: • Low on-state resistance RDS(on)1 = 21 m MAX. (VGS = 10 V, ID = 9 A) RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 9 A)• Low Ciss: Ciss = 570 pF TYP.• Built-in gate protection diodeSpecifications PARAMETER SYMBOL RATING UNIT Drain to source voltage (VGS = ...

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SeekIC No. : 004226805 Detail

2SK3640: Features: • Low on-state resistance RDS(on)1 = 21 m MAX. (VGS = 10 V, ID = 9 A) RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 9 A)• Low Ciss: Ciss = 570 pF TYP.• Built-in gate protection...

2SK3640 Data Sheet

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Part Number:
2SK3640
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-state resistance
   RDS(on)1 = 21 m MAX. (VGS = 10 V, ID = 9 A)
   RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 9 A)
• Low Ciss:    Ciss = 570 pF TYP.
• Built-in gate protection diode


Specifications

PARAMETER
SYMBOL
RATING

UNIT

Drain to source voltage (VGS = 0 V)
VDSS
30
V
Gate to source voltage(VDS = 0 V)
VGSS
±16
V
Drain current(DC)(TC = 25°C)
ID(DC)
±19
A
Drain peak current(Pulse)1
ID(pulse)
±76
A
Total Power Dissipation (TC = 25°C)
PT1
20
W
Total Power Dissipation
PT2
1.0
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55to+150
Single Avalanche Current 2
IAS
10
A
Single Avalanche Energy 2
EAS
10
mJ
Notes 1. PW 10 s, Duty Cycle 1%
           2. Starting Tch = 25°C, VDD = 15 V, RG = 25 , L = 100 H, VGS = 20 0 V


Description

The 2SK3640 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.




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