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2SK3639

Features: • Low on-state resistance RDS(on)1 = 5.5 m MAX. (VGS = 10 V, ID = 32 A) RDS(on)2 = 8.5 m MAX. (VGS = 4.5 V, ID = 32 A)• Low Ciss: Ciss = 2400 pF TYP.Specifications PARAMETER SYMBOL RATING UNIT Drain to source voltage (VGS = 0 V) VDSS 20 V Gate t...

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SeekIC No. : 004226803 Detail

2SK3639: Features: • Low on-state resistance RDS(on)1 = 5.5 m MAX. (VGS = 10 V, ID = 32 A) RDS(on)2 = 8.5 m MAX. (VGS = 4.5 V, ID = 32 A)• Low Ciss: Ciss = 2400 pF TYP.Specifications PARAM...

2SK3639 Data Sheet

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Part Number:
2SK3639
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-state resistance
   RDS(on)1 = 5.5 m MAX. (VGS = 10 V, ID = 32 A)
   RDS(on)2 = 8.5 m MAX. (VGS = 4.5 V, ID = 32 A)
• Low Ciss: Ciss = 2400 pF TYP.


Specifications

PARAMETER
SYMBOL
RATING

UNIT

Drain to source voltage (VGS = 0 V)
VDSS
20
V
Gate to source voltage(VDS = 0 V)
VGSS
±20
V
Drain current(DC)(TC = 25°C)
ID(DC)
±64
A
Drain peak current(Pulse)1
ID(pulse)
±256
A
Total Power Dissipation (TC = 25°C)
PT1
40
W
Total Power Dissipation
PT2
1.0
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55to+150
Note1  PW 10 s, Duty Cycle 1%


Description

The 2SK3639 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current  applications such as DC/DC converter with synchronous rectifier.




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