Position: Home  > All Categories> Integrated Circuits (ICs) > 2SK3638

2SK3638

Features: • Low on-state resistance RDS(on)1 = 8.5 m MAX. (VGS = 10 V, ID = 32 A) RDS(on)2 = 15 m MAX. (VGS = 4.5 V, ID = 18 A)• Low Ciss: Ciss = 1100 pF TYP.• Built-in gate protection diodeSpecifications PARAMETER SYMBOL RATING UNIT Drain to source voltage (VG...

product image

2SK3638 Picture
See larger image
SeekIC No. : 004226802 Detail

2SK3638: Features: • Low on-state resistance RDS(on)1 = 8.5 m MAX. (VGS = 10 V, ID = 32 A) RDS(on)2 = 15 m MAX. (VGS = 4.5 V, ID = 18 A)• Low Ciss: Ciss = 1100 pF TYP.• Built-in gate protec...

2SK3638 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
2SK3638
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Low on-state resistance
   RDS(on)1 = 8.5 m MAX. (VGS = 10 V, ID = 32 A)
   RDS(on)2 = 15 m MAX. (VGS = 4.5 V, ID = 18 A)
• Low Ciss: Ciss = 1100 pF TYP.
• Built-in gate protection diode


Specifications

PARAMETER
SYMBOL
RATING

UNIT

Drain to source voltage (VGS = 0 V)
VDSS
20
V
Gate to source voltage(VDS = 0 V)
VGSS
±20
V
Drain current(DC)(TC = 25°C)
ID(DC)
±64
A
Drain peak current(Pulse)1
ID(pulse)
±220
A
Total Power Dissipation (TC = 25°C)
PT1
36
W
Total Power Dissipation
PT2
1.0
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55to+150
Note 1 PW 10 s, Duty Cycle 1%


Description

The 2SK3638 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Kits
IT243
UVSC-110-4E1
Audio Products
HUC1002
WM-64CT
Optoelectronics
SFH7770
TLP423J
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
View more