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2SK3638

Features: • Low on-state resistance RDS(on)1 = 8.5 m MAX. (VGS = 10 V, ID = 32 A) RDS(on)2 = 15 m MAX. (VGS = 4.5 V, ID = 18 A)• Low Ciss: Ciss = 1100 pF TYP.• Built-in gate protection diodeSpecifications PARAMETER SYMBOL RATING UNIT Drain to source voltage (VG...

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SeekIC No. : 004226802 Detail

2SK3638: Features: • Low on-state resistance RDS(on)1 = 8.5 m MAX. (VGS = 10 V, ID = 32 A) RDS(on)2 = 15 m MAX. (VGS = 4.5 V, ID = 18 A)• Low Ciss: Ciss = 1100 pF TYP.• Built-in gate protec...

2SK3638 Data Sheet

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Part Number:
2SK3638
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-state resistance
   RDS(on)1 = 8.5 m MAX. (VGS = 10 V, ID = 32 A)
   RDS(on)2 = 15 m MAX. (VGS = 4.5 V, ID = 18 A)
• Low Ciss: Ciss = 1100 pF TYP.
• Built-in gate protection diode


Specifications

PARAMETER
SYMBOL
RATING

UNIT

Drain to source voltage (VGS = 0 V)
VDSS
20
V
Gate to source voltage(VDS = 0 V)
VGSS
±20
V
Drain current(DC)(TC = 25°C)
ID(DC)
±64
A
Drain peak current(Pulse)1
ID(pulse)
±220
A
Total Power Dissipation (TC = 25°C)
PT1
36
W
Total Power Dissipation
PT2
1.0
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55to+150
Note 1 PW 10 s, Duty Cycle 1%


Description

The 2SK3638 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.




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