DescriptionThe 2SK3635-Z is designed as one kind of N-channel power mosfet that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. Features of the 2SK3635-Z are:(1)High voltage: VDSS = 200 V; (2)Gate volta...
2SK3635-Z: DescriptionThe 2SK3635-Z is designed as one kind of N-channel power mosfet that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications...
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The 2SK3635-Z is designed as one kind of N-channel power mosfet that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. Features of the 2SK3635-Z are:(1)High voltage: VDSS = 200 V; (2)Gate voltage rating: +/-30 V RDS(on) = 0.60 MAX. (VGS = 10 V, ID = 3.0 A); (3)Low Ciss: Ciss = 270 pF TYP. (VDS = 10 V, VGS = 0 V); (4)Built-in gate protection diode; (5)TO-251/TO-252 package; (6)Avalanche capability rated.
The absolute maximum ratings of the 2SK3635-Z can be summarized as:(1)Drain to Source Voltage: 200 V;(2)Gate to Source Voltage: ±30 V;(3)Drain Current (DC) (TC = 25°C): ±8.0 A;(4)Drain Current (Pulse): ±24 A;(5)Total Power Dissipation (TC = 25°C): 24 W;(6)Total Power Dissipation (TA = 25°C): 1.0 W;(7)Channel Temperature: 150 °C;(8)Storage Temperature:55 to +150 °C;(9)Single Avalanche Current: 8.0 A;(10)Single Avalanche Energy: 6.4 mJ;(11)Repetitive Pulse Avalanche Energy: 2.4 mJ;(12):Repetitive Avalanche Current: 8.0 A. If you want to know more information such as the electrical characteristics about the 2SK3635-Z, please download the datasheet in www.seekic.com or www.chinaicmart.com.