Features: 4.5V drive available.Low on-state resistance,RDS(on)1 = 13.5m MAX. (VGS= 10 V, ID = 24A)Low gate charge QG = 22nC TYP. (VDD = 24 V, VGS = 10 V, ID = 48 A)Built-in gate protection diodeSurface mount device availableSpecifications Parameter Symbol Ratings Unit Drain to ...
2SK3574: Features: 4.5V drive available.Low on-state resistance,RDS(on)1 = 13.5m MAX. (VGS= 10 V, ID = 24A)Low gate charge QG = 22nC TYP. (VDD = 24 V, VGS = 10 V, ID = 48 A)Built-in gate protection diodeSur...
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Parameter |
Symbol |
Ratings |
Unit |
Drain to source voltage Gate to source voltage Drain current Collector power dissipation Ta = 25 Tc = 25 Junction temperature Storage temperature |
VDSS VGSS ID Idp * PD Tj Tstg |
30 ±20 ±48 ±140 29 1.5 150 -55 to +150 |
V V A A W W °C °C |