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2SK3571

Features: •4.5V drive available.•Low on-state resistance, RDS(on)1 = 9.0 m MAX. (VGS = 10 V, ID = 24 A)•Low gate charge QG = 21 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A)•Built-in gate protection diode•Surface mount device availableSpecifications Drain to Source...

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SeekIC No. : 004226768 Detail

2SK3571: Features: •4.5V drive available.•Low on-state resistance, RDS(on)1 = 9.0 m MAX. (VGS = 10 V, ID = 24 A)•Low gate charge QG = 21 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A)•Bu...

2SK3571 Data Sheet

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Part Number:
2SK3571
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•4.5V drive available.
•Low on-state resistance,
  RDS(on)1 = 9.0 m MAX. (VGS = 10 V, ID = 24 A)
•Low gate charge
  QG = 21 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A)
•Built-in gate protection diode
•Surface mount device available


Specifications

Drain to Source Voltage (VGS = 0 V) VDSS 20 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±48 A
Drain Current (pulse)Note ID(pulse) ±192 A
Total Power Dissipation (TA = 25°C) PT1 1.5 W
Total Power Dissipation (TC = 25°C) PT2 40 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C

Note PW 10 s, Duty Cycle 1%


Description

The 2SK3571 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.




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