2SK3569

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Gate Charge (Qg) @ Vgs: 42nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 10A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Vgs(th) (Max) @ Id: 4V @ 1mA
Power - Max: 45W
Input Capacitance (Ciss) @ Vds: 1500pF @ 25V
Manufacturer: Toshiba
Supplier Device Package: TO-220SIS
Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V


Application

• Low drain-source ON resistance: R_{DS (ON)} = 0.54􀐊 (typ.)
• High forward transfer admittance: |Yfs| = 8.5S (typ.)
• Low leakage current: I_DSS = 100 􀐖A (V_DS = 600 V)
• Enhancement-mode: V_th = 2.0~4.0 V (V_DS = 10 V, I_D = 1 mA)


Specifications

Characteristics		Symbol	Rating	Unit
Drain-source voltage		VDSS	600	V
Drain-gate voltage (RGS=20 k)		VDGR	600	V
Gate-source voltage		VGSS	±30	V
Drain current	DC              (Note 1)	ID	10	A
	Pulse(t = 1 ms) (Note 1)	IDP	40
Drain power dissipation (Tc= 25 )		PD	45	W
Single pulse avalanche energy                                                (Note 2)		EAS	363	mJ
Avalanche current		IAR	10	A
Repetitive avalanche energy  (Note 3)		EAR	4.5	mJ
Channel temperature		Tch	150
Storage temperature range		Tstg	-55~150