Application• Low drain-source ON resistance: RDS (ON) = 1.7 (typ.)• High forward transfer admittance: |Yfs| = S (typ.)• Low leakage current: IDSS = 100 A (VDS = 600 V)• Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characte...
2SK3567: Application• Low drain-source ON resistance: RDS (ON) = 1.7 (typ.)• High forward transfer admittance: |Yfs| = S (typ.)• Low leakage current: IDSS = 100 A (VDS =...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Characteristics |
Symbol |
Rating |
Unit | |
Drain-source voltage |
VDSS |
600 |
V | |
Drain-gate voltage (RGS=20 k) |
VDGR |
600 |
V | |
Gate-source voltage |
VGSS |
±30 |
V | |
Drain current | DC (Note 1) |
ID |
3.5 |
A |
Pulse(t = 1 ms) (Note 1) |
IDP |
14 | ||
Drain power dissipation (Tc= 25 ) |
PD |
35 |
W | |
Single pulse avalanche energy (Note 2) |
EAS |
TBD |
mJ | |
Avalanche current |
IAR |
3.5 |
A | |
Repetitive avalanche energy (Note 3) |
EAR |
3.5 |
mJ | |
Channel temperature |
Tch |
150 |
| |
Storage temperature range |
Tstg |
-55~150 |
|