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SeekIC No. : 003430967 Detail

2SK3564: MOSFET N-CH 900V 3A TO-220SIS

2SK3564 Data Sheet

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Part Number:: 2SK3564
Mfg:
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/12/22

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Product Details

Quick Details

Series:	-	Manufacturer:	Toshiba
FET Type:	MOSFET N-Channel, Metal Oxide	Transistor Type:	-
Gain :	19.5 dB	Current - Collector (Ic) (Max):	-
FET Feature:	Standard	Drain to Source Voltage (Vdss):	900V
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	3A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	4.3 Ohm @ 1.5A, 10V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	4V @ 1mA	Gate Charge (Qg) @ Vgs:	17nC @ 10V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	700pF @ 25V
Power - Max:	40W	Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack	Supplier Device Package:	TO-220SIS

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 3A
Gate Charge (Qg) @ Vgs: 17nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Input Capacitance (Ciss) @ Vds: 700pF @ 25V
Power - Max: 40W
Drain to Source Voltage (Vdss): 900V
Package / Case: TO-220-3 Full Pack
Vgs(th) (Max) @ Id: 4V @ 1mA
Manufacturer: Toshiba
Supplier Device Package: TO-220SIS
Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V

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2SK3564

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