Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 5A
Drain to Source Voltage (Vdss): 500V
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 16nC @ 10V
Power - Max: 35W
Package / Case: TO-220-3 Full Pack
Vgs(th) (Max) @ Id: 4V @ 1mA
Input Capacitance (Ciss) @ Vds: 550pF @ 25V
Manufacturer: Toshiba
Supplier Device Package: TO-220SIS
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V
Application`Low drain-source ON resistance: RDS (ON) = 1.35 (typ.)
`High forward transfer admittance: |Yfs| = 3.5S (typ.)
`Low leakage current: IDSS = 100 A (VDS = 500 V)
`Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications
|
Parameter |
Symbol |
Limit |
Unit |
| Drain-source voltage |
VDSS |
500 |
V |
| Drain-gate voltage (RGS = 20 k) |
VDGR |
500 |
| Gate-source voltage |
VGSS |
±30 |
| Drain current |
DC (Note 1) |
ID |
5 |
A |
| Pulse (t = 1 ms) (Note 1) |
IDP |
20 |
| Drain power dissipation Tc = 25°C |
PD |
35 |
W |
| Single pulse avalanche energy (Note 2) |
EAS |
180 |
mJ |
| Avalanche current |
IAR |
5 |
A |
| Repetitive avalanche energy (Note 3) |
EAR |
3.5 |
mJ |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature range |
Tstg |
-55~150 |
°C |
2SK3563 Data Sheet
