Application• Low drain-source ON resistance: RDS (ON) = 0.9 (typ.)• High forward transfer admittance: |Yfs| = 5.0S (typ.)• Low leakage current: IDSS = 100 A (VDS = 600 V)• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristics Symbol ...
2SK3562: Application• Low drain-source ON resistance: RDS (ON) = 0.9 (typ.)• High forward transfer admittance: |Yfs| = 5.0S (typ.)• Low leakage current: IDSS = 100 A (VDS = 600 V)• En...
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Characteristics | Symbol | Rating | Unit | |
Drain-source voltage | VDSS | 600 | V | |
Drain-gate voltage (RGS = 20 k | VDGR | 600 | V | |
Gate-source voltage | VGSS | ±30 | V | |
Drain current | DC (Note 1) | ID | 6 | A |
Pulse (t = 1 ms) (Note 1) |
IDP | 24 | ||
Drain power dissipation (Tc = 25°C) | PD | 40 | W | |
Single pulse avalanche energy (Note 2) | EAS | 345 | mJ | |
Avalanche current | IAR | 6 | A | |
Repetitive avalanche energy (Note 3) | EAR | 4 | mJ | |
Channel temperature | Tch | 150 | °C | |
Storage temperature range | Tstg | -55~150 | °C |