Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 8A
Gate Charge (Qg) @ Vgs: 28nC @ 10V
Drain to Source Voltage (Vdss): 500V
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 40W
Package / Case: TO-220-3 Full Pack
Vgs(th) (Max) @ Id: 4V @ 1mA
Input Capacitance (Ciss) @ Vds: 1050pF @ 25V
Manufacturer: Toshiba
Supplier Device Package: TO-220SIS
Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V
Application• Low drain-source ON resistance: RDS (ON) = 0.75 (typ.)
• High forward transfer admittance: |Yfs| = 6.5S (typ.)
• Low leakage current: IDSS = 100 A (VDS = 500 V)
• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications
| Item |
SYMBOL |
RATINGS |
UNIT |
| Drain-source voltage |
V DSS |
500 |
V |
| Drain-gate voltage (RGS = 20 k) |
VDGR |
500 |
V |
| Gate-source voltage |
VGSS |
±30 |
V |
| Drain- Current (DC) (Note 1) |
I D |
8 |
A |
| Drain- Current (puls) (Note 1) |
I DP |
32 |
A |
| Drain power dissipation (Tc = 25°C) |
PD |
40 |
W |
| Single pulse avalanche energy (Note 2) |
EAS |
312 |
W |
| Avalanche current |
IAR |
8 |
mJ |
| Repetitive avalanche energy (Note 3) |
EAR |
4 |
MJ |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature range |
Tstg |
-55 ~ +150 |
°C |
2SK3561 Data Sheet
