2SK3543

Application`Low drain-source ON resistance: RDS (ON) = 1.9 (typ.)`High forward transfer admittance: |Yfs| = 1.3 S (typ.)`Low leakage current: IDSS = 100 A (max) (VDS = 450 V)`Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristics Symbol Rating Un...

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SeekIC No. : 004226757 Detail

2SK3543: Application`Low drain-source ON resistance: RDS (ON) = 1.9 (typ.)`High forward transfer admittance: |Yfs| = 1.3 S (typ.)`Low leakage current: IDSS = 100 A (max) (VDS = 450 V)`Enhancement-model: Vth...

floor Price/Ceiling Price

Part Number:
2SK3543
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2025/3/12

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Product Details

Description



Application

`Low drain-source ON resistance: RDS (ON) = 1.9 (typ.)
`High forward transfer admittance: |Yfs| = 1.3 S (typ.)
`Low leakage current: IDSS = 100 A (max) (VDS = 450 V)
`Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)



Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
450
V
Drain-gate voltage (RGS=20 k)
VDGR
450
V
Gate-source voltage
VGSS
±30
V
Drain current DC              (Note 1)
ID
2
A
Pulse           (Note 1)
IDP
5
Drain power dissipation (Tc= 25 )
PD
30
W
Single pulse avalanche energy
                                              (Note 2)
EAS
103
mJ
Avalanche current
IAR
2
A
Repetitive avalanche energy (Note 3)
EAR
3
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
-55 to150



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