Application`Low drain-source ON resistance: RDS (ON) = 1.9 (typ.)`High forward transfer admittance: |Yfs| = 1.3 S (typ.)`Low leakage current: IDSS = 100 A (max) (VDS = 450 V)`Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristics Symbol Rating Un...
2SK3543: Application`Low drain-source ON resistance: RDS (ON) = 1.9 (typ.)`High forward transfer admittance: |Yfs| = 1.3 S (typ.)`Low leakage current: IDSS = 100 A (max) (VDS = 450 V)`Enhancement-model: Vth...
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Characteristics |
Symbol |
Rating |
Unit | |
Drain-source voltage |
VDSS |
450 |
V | |
Drain-gate voltage (RGS=20 k) |
VDGR |
450 |
V | |
Gate-source voltage |
VGSS |
±30 |
V | |
Drain current | DC (Note 1) |
ID |
2 |
A |
Pulse (Note 1) |
IDP |
5 | ||
Drain power dissipation (Tc= 25 ) |
PD |
30 |
W | |
Single pulse avalanche energy (Note 2) |
EAS |
103 |
mJ | |
Avalanche current |
IAR |
2 |
A | |
Repetitive avalanche energy (Note 3) |
EAR |
3 |
mJ | |
Channel temperature |
Tch |
150 |
| |
Storage temperature range |
Tstg |
-55 to150 |
|