Position: Home  > All Categories> Integrated Circuits (ICs) > 2SK3511

2SK3511

Features: • Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A)• Low Ciss: Ciss = 5900 pF TYP.• Built-in gate protection diodeSpecifications Drain to Source Voltage (VGS = 0 V)Gate to Source Voltage (VDS = 0 V)Drain Current (DC) (TC = 25°C)Dra...

product image

2SK3511 Picture
See larger image
SeekIC No. : 004226735 Detail

2SK3511: Features: • Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A)• Low Ciss: Ciss = 5900 pF TYP.• Built-in gate protection diodeSpecifications Dr...

2SK3511 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
2SK3511
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/6/11

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
• Low Ciss: Ciss = 5900 pF TYP.
• Built-in gate protection diode


Specifications

Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2		 VDSS
VGSS
ID(DC)
ID(pulse)
PT
PT
Tch
Tstg
IAS
EAS		 75
±20
±83
±260
100
1.5
150
55 to +150
52
250		 V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 µs, Duty cycle 1%
2. Starting Tch = 25°C, VDD = 35 V, RG = 25 Ω, VGS = 20 0 V


Description

The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Switches
US32DMRJ
HBGQ22P-11ET
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Line Protection, Backups
BX0023
A20B-1008-0550
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
View more