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2SK3511

Features: • Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A)• Low Ciss: Ciss = 5900 pF TYP.• Built-in gate protection diodeSpecifications Drain to Source Voltage (VGS = 0 V)Gate to Source Voltage (VDS = 0 V)Drain Current (DC) (TC = 25°C)Dra...

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2SK3511: Features: • Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A)• Low Ciss: Ciss = 5900 pF TYP.• Built-in gate protection diodeSpecifications Dr...

2SK3511 Data Sheet

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Part Number:
2SK3511
Supply Ability:
5000

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Product Details

Description



Features:

• Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
• Low Ciss: Ciss = 5900 pF TYP.
• Built-in gate protection diode


Specifications

Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2		 VDSS
VGSS
ID(DC)
ID(pulse)
PT
PT
Tch
Tstg
IAS
EAS		 75
±20
±83
±260
100
1.5
150
55 to +150
52
250		 V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 µs, Duty cycle 1%
2. Starting Tch = 25°C, VDD = 35 V, RG = 25 Ω, VGS = 20 0 V


Description

The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications.


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