2SK3510-ZJ_1377770 Selling Leads, Price trend, 2SK3510-ZJ_1377770 DataSheet download, circuit diagram from SeekIC.com

Features: •Super low on-state resistance:RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A)• Low Ciss: Ciss = 8500 pF TYP.•Built-in gate protection diodeSpecificationsDrain to Source Voltage (VGS = 0 V) VDSS 75 VGate to Source Voltage (VDS = 0 V) VGSS ±20 VDrain Current (DC) (TC...

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SeekIC No. : 004226734 Detail

2SK3510-ZJ_1377770: Features: •Super low on-state resistance:RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A)• Low Ciss: Ciss = 8500 pF TYP.•Built-in gate protection diodeSpecificationsDrain to Sou...

2SK3510-ZJ_1377770 Data Sheet

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Part Number:: 2SK3510-ZJ_1377770
Supply Ability:: 5000

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Upload time: 2024/10/30

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Product Details

Description

Features:

•Super low on-state resistance:
  R_DS(on) = 8.5 mΩ MAX. (V_GS = 10 V, I_D = 42 A)
• Low Ciss: C_iss = 8500 pF TYP.
•Built-in gate protection diode

Specifications

Drain to Source Voltage (V_GS = 0 V)              V_DSS         75           V
Gate to Source Voltage (V_DS = 0 V)                V_GSS         ±20        V
Drain Current (DC) (T_C = 25°C)                      I_D(DC)      ±83        A
Drain Current (pulse)^Note1I_D(pulse)   ±332      A
Total Power Dissipation (T_C = 25°C)              P_T1           125        W
Total Power Dissipation (T_A = 25°C)              P_T2           1.5          W
Channel Temperature                                     T_ch            150         °C
Storage Temperature                                     T_stg     55 to +150 °C
Single Avalanche Current ^Note2I_AS             69            A
Single Avalanche Energy ^Note2E_AS            450          mJ
Notes 1. P_W 10 µs, Duty Cycle 1%
          2. Starting T_ch = 25°C, V_DD = 35 V, R_G = 25 Ω, V_GS = 20 0 V

Description

The 2SK3510-ZJ_1377770 is N-channel MOS Field Effect Transistor designed for high current switching applications.

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2SK3510-ZJ_1377770

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