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2SK3510-ZJ_1377770

Features: •Super low on-state resistance:RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A)• Low Ciss: Ciss = 8500 pF TYP.•Built-in gate protection diodeSpecificationsDrain to Source Voltage (VGS = 0 V) VDSS 75 VGate to Source Voltage (VDS = 0 V) VGSS ±20 VDrain Current (DC) (TC...

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SeekIC No. : 004226734 Detail

2SK3510-ZJ_1377770: Features: •Super low on-state resistance:RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A)• Low Ciss: Ciss = 8500 pF TYP.•Built-in gate protection diodeSpecificationsDrain to Sou...

2SK3510-ZJ_1377770 Data Sheet

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Part Number:
2SK3510-ZJ_1377770
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Product Details

Description



Features:

•Super low on-state resistance:
  RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
• Low Ciss: Ciss = 8500 pF TYP.
•Built-in gate protection diode


Specifications

Drain to Source Voltage (VGS = 0 V)               VDSS         75           V
Gate to Source Voltage (VDS = 0 V)                VGSS         ±20        V
Drain Current (DC) (TC = 25°C)                      ID(DC)      ±83        A
Drain Current (pulse)Note1                              ID(pulse)   ±332      A
Total Power Dissipation (TC = 25°C)              PT1           125        W
Total Power Dissipation (TA = 25°C)              PT2           1.5          W
Channel Temperature                                     Tch            150         °C
Storage Temperature                                     Tstg     55 to +150 °C
Single Avalanche Current Note2                       IAS             69            A
Single Avalanche Energy Note2                        EAS            450          mJ
Notes 1. PW 10 µs, Duty Cycle 1%
          2. Starting Tch = 25°C, VDD = 35 V, RG = 25 Ω, VGS = 20 0 V


Description

 The 2SK3510-ZJ_1377770 is N-channel MOS Field Effect Transistor designed for high current switching applications.


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