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2SK3507-ZK_1377768

Features: • 4.5 V drive available • Low on-state resistance RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 11 A) • Low gate charge QG = 8.5 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 22 A) • Built-in G-S protection diode • Surface mount package available SpecificationsDra...

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2SK3507-ZK_1377768: Features: • 4.5 V drive available • Low on-state resistance RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 11 A) • Low gate charge QG = 8.5 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 2...

2SK3507-ZK_1377768 Data Sheet

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Part Number:
2SK3507-ZK_1377768
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 4.5 V drive available
• Low on-state resistance
   RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 11 A)
• Low gate charge
  QG = 8.5 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 22 A)
• Built-in G-S protection diode
• Surface mount package available


Specifications

Drain to Source Voltage (VGS = 0 V)                 VDSS            30                   V
Gate to Source Voltage (VDS = 0 V)                  VGSS            ±16                V
Drain Current (DC) (TC = 25°C)                       ID(DC)          ±22                A
Drain Current (pulse) Note1                               ID(pulse)      ±45                A
Total Power Dissipation (TC = 25°C)                PT1              20                  W
Total Power Dissipation Note2                            PT2              1.5                 W
Channel Temperature                                       Tch                150               °C
Storage Temperature                                       Tstg              −55 to +150  °C
Single Avalanche Current Note3                         IAS               10                    A
Single Avalanche Energy Note3                          EAS               10                   mJ
 
Notes 1.  PW 10 µs, Duty Cycle 1% 
           2.  Mounted on glass epoxy board of 1 inch x 1 inch x 1.6 mm
           3.  Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 0 V 
 


Description

  The 2SK3507-ZK_1377768 is N-channel MOS FET device that features  a low on-state resistance and excellent switching characteristics,  designed for low voltage high current applications such as DC/DC 
converter with synchronous rectifier.




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