Application·Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)·High forward transfer admittance: |Yfs| = 26 S (typ.)·Low leakage current: IDSS = 100 µA (max) (VDS = 30 V)·Enhancement-model: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA)Specifications Item SYMBOL RATINGS ...
2SK3506: Application·Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)·High forward transfer admittance: |Yfs| = 26 S (typ.)·Low leakage current: IDSS = 100 µA (max) (VDS = 30 V)·Enhancemen...
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Item |
SYMBOL |
RATINGS |
UNIT |
Drain-source voltage |
V DSS |
30 |
V |
Drain-gate voltage (RGS = 20 k) |
VDGR |
30 |
V |
Gate-source voltage |
VGSS |
±20 |
V |
Drain- Current (DC) (Note 1) |
I D |
45 |
A |
Drain- Current (puls) (Note 1) |
I DP |
135 |
A |
Drain power dissipation (Tc = 25°C) |
PD |
100 |
W |
Single pulse avalanche energy (Note 2) |
EAS |
220 |
W |
Avalanche current |
IAR |
45 |
mJ |
Repetitive avalanche energy (Note 3) |
EAR |
10 |
MJ |
Channel temperature |
Tch |
150 |
°C |
Storage temperature range |
Tstg |
-55 ~ +150 |
°C |