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2SK3506

Application·Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)·High forward transfer admittance: |Yfs| = 26 S (typ.)·Low leakage current: IDSS = 100 µA (max) (VDS = 30 V)·Enhancement-model: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA)Specifications Item SYMBOL RATINGS ...

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SeekIC No. : 004226730 Detail

2SK3506: Application·Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)·High forward transfer admittance: |Yfs| = 26 S (typ.)·Low leakage current: IDSS = 100 µA (max) (VDS = 30 V)·Enhancemen...

2SK3506 Data Sheet

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Part Number:
2SK3506
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Description



Application

·Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)
·High forward transfer admittance: |Yfs| = 26 S (typ.)
·Low leakage current: IDSS = 100 µA (max) (VDS = 30 V)
·Enhancement-model: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA)


Specifications

Item
SYMBOL
RATINGS
UNIT
Drain-source voltage
V DSS
30
V
Drain-gate voltage (RGS = 20 k)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
Drain- Current (DC) (Note 1)
I D
45
A
Drain- Current (puls) (Note 1)
I DP
135
A
Drain power dissipation (Tc = 25°C)
PD
100
W
Single pulse avalanche energy (Note 2)
EAS
220
W
Avalanche current
IAR
45
mJ
Repetitive avalanche energy (Note 3)
EAR
10
MJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55 ~ +150
°C



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