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2SK3503

Features: • Automatic mounting supported• Gate can be driven by a 1.5 V power source• Because of its high input impedance, there's no need to consider a drive current• Since bias resistance can be omitted, the number of components required can be reducedSpecifications ...

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SeekIC No. : 004226728 Detail

2SK3503: Features: • Automatic mounting supported• Gate can be driven by a 1.5 V power source• Because of its high input impedance, there's no need to consider a drive current• Since ...

2SK3503 Data Sheet

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Part Number:
2SK3503
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• Automatic mounting supported
• Gate can be driven by a 1.5 V power source
• Because of its high input impedance, there's no need to consider a drive current
• Since bias resistance can be omitted, the number of components required can be reduced


Specifications

Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (Tc = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C) Note2
Channel Temperature
Storage Temperature
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
16
±7.0
±0.1
±0.4
200
150
55 to +150
V
V
A
A
mW
°C
°C
Notes 1. PW 10 µs, Duty Cycle 1%
2. Mounted on ceramic substrate of 3.0 cm2 * 0.64 mm


Description

The 2SK3503 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras.




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