2SK3498

Application• Low drain-source ON resistance: RDS (ON) = 4.0 (typ.)• High forward transfer admittance: Yfs = 0.6 S (typ.)• Low leakage current: IDSS = 100 A (max) (VDS = 400 V)• Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)Specifications ...

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SeekIC No. : 004226724 Detail

2SK3498: Application• Low drain-source ON resistance: RDS (ON) = 4.0 (typ.)• High forward transfer admittance: Yfs = 0.6 S (typ.)• Low leakage current: IDSS = 100 A (max) (...

floor Price/Ceiling Price

Part Number:
2SK3498
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Description



Application

• Low drain-source ON resistance: RDS (ON) = 4.0 (typ.)
• High forward transfer admittance: Yfs = 0.6 S (typ.)
• Low leakage current: IDSS = 100 A (max) (VDS = 400 V)
• Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)



Specifications

Item
Symbol
Rating
Unit
Drain−source voltage
VDSS
400
V
Drain−gate voltage (RGS = 20 k)
VDGR
400
V
Gate−source voltage
VGSS
±30
V
Drain current DC (Note 1)
ID
1
A
Pulse (Note 1)
IDP
3
A
Drain power dissipation
PD
20
W
Single pulse avalanche energy (Note 2)
EAS
113
mJ
Avalanche current
IAR
1
A
Repetitive avalanche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55to+150
°C



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