Application• Low drain-source ON resistance: RDS (ON) = 4.0 (typ.)• High forward transfer admittance: Yfs = 0.6 S (typ.)• Low leakage current: IDSS = 100 A (max) (VDS = 400 V)• Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)Specifications ...
2SK3498: Application• Low drain-source ON resistance: RDS (ON) = 4.0 (typ.)• High forward transfer admittance: Yfs = 0.6 S (typ.)• Low leakage current: IDSS = 100 A (max) (...
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Item |
Symbol |
Rating |
Unit | |
Drain−source voltage |
VDSS |
400 |
V | |
Drain−gate voltage (RGS = 20 k) |
VDGR |
400 |
V | |
Gate−source voltage |
VGSS |
±30 |
V | |
Drain current | DC (Note 1) |
ID |
1 |
A |
Pulse (Note 1) |
IDP |
3 |
A | |
Drain power dissipation |
PD |
20 |
W | |
Single pulse avalanche energy (Note 2) |
EAS |
113 |
mJ | |
Avalanche current |
IAR |
1 |
A | |
Repetitive avalanche energy (Note 3) |
EAR |
2 |
mJ | |
Channel temperature |
Tch |
150 |
°C | |
Storage temperature range |
Tstg |
-55to+150 |
°C |