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2SK3481

Features: • Super low on-state resistance: RDS(on)1 = 50m MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58m MAX. (VGS = 4.5 V, ID = 15 A)• Low Ciss: Ciss = 2300 pF TYP.• Built-in gate protection diodeSpecifications PARAMETER SYMBOL RATING UNIT Drain to source voltage...

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SeekIC No. : 004226710 Detail

2SK3481: Features: • Super low on-state resistance: RDS(on)1 = 50m MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58m MAX. (VGS = 4.5 V, ID = 15 A)• Low Ciss: Ciss = 2300 pF TYP.• Built-in gate pr...

2SK3481 Data Sheet

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Part Number:
2SK3481
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Super low on-state resistance:
   RDS(on)1 = 50m MAX. (VGS = 10 V, ID = 15 A)
   RDS(on)2 = 58m MAX. (VGS = 4.5 V, ID = 15 A)
• Low Ciss:    Ciss = 2300 pF TYP.
• Built-in gate protection diode


Specifications

PARAMETER
SYMBOL
RATING

UNIT

Drain to source voltage (VGS = 0 V)
VDSS
100
V
Gate to source voltage(VDS = 0 V)
VGSS
±20
V
Drain current(DC)(TC = 25°C)
ID(DC)
±30
A
Drain peak current(Pulse)1
ID(pulse)
±60
A
Total Power Dissipation (TC = 25°C)
PT1
56
W
Total Power Dissipation (TA = 25°C)
PT2
1.5
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55to+150
Single Avalanche Current 2
IAS
26
A
Single Avalanche Energy 2
EAS
68
mJ
Notes 1. PW 10 s, Duty cycle 1%
           2. Starting Tch = 25°C, VDD = 50 V, RG = 25 , VGS = 20 0 V


Description

The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching applications.


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