Features: • Super low on-state resistance: RDS(on)1 = 31m MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 36m MAX. (VGS = 4.5 V, ID = 25 A)• Low Ciss: Ciss = 3600 pF TYP.• Built-in gate protection diodeSpecifications PARAMETER SYMBOL RATING UNIT Drain to source voltage...
2SK3480: Features: • Super low on-state resistance: RDS(on)1 = 31m MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 36m MAX. (VGS = 4.5 V, ID = 25 A)• Low Ciss: Ciss = 3600 pF TYP.• Built-in gate pr...
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PARAMETER |
SYMBOL |
RATING |
UNIT |
Drain to source voltage (VGS = 0 V) |
VDSS |
100 |
V |
Gate to source voltage(VDS = 0 V) |
VGSS |
±20 |
V |
Drain current(DC)(TC = 25°C) |
ID(DC) |
±50 |
A |
Drain peak current(Pulse)1 |
ID(pulse) |
±100 |
A |
Total Power Dissipation (TC = 25°C) |
PT1 |
84 |
W |
Total Power Dissipation (TA = 25°C) |
PT2 |
1.5 |
W |
Channel temperature |
Tch |
150 |
|
Storage temperature |
Tstg |
-55to+150 |
|
Single Avalanche Current 2 |
IAS |
34 |
A |
Single Avalanche Energy 2 |
EAS |
116 |
mJ |