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2SK3479

Features: • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A)• Low Ciss: Ciss = 11000 pF TYP.• Built-in gate protection diodeSpecifications Drain to Source Voltage (VGS = 0 V)Gate to Source...

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SeekIC No. : 004226708 Detail

2SK3479: Features: • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A)• Low Ciss: Ciss = 11000 pF TYP.•...

2SK3479 Data Sheet

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Part Number:
2SK3479
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Super low on-state resistance:
  RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A)
  RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A)
• Low Ciss: Ciss = 11000 pF TYP.
• Built-in gate protection diode


Specifications

Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
100
±20
±83
±332
125
1.5
150
55 to +150
65
422
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 µs, Duty cycle 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 0 V



Description

The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications.


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